MRF421 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% Intermodulation Distortion @ 100 W (PEP) IMD = 30 dB (Min) .. To proposed EIA method of measurement.