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MRF5S21090LSR3 - RF Power Field Effect Transistors

Download the MRF5S21090LSR3 datasheet PDF. This datasheet also covers the MRF5S21090LR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

9.1 pF Chip Capacitor, B Case 8.2 pF Chip Capacitor, B Case 2.0 pF Chip Capacitor, B Case 0.1 µF Chip Capacitors, B Case 5.6 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 7.5 pF Chip Capacitor, B Case 1.2 pF Chip Capacitor, B Case 0.56 µF Chip Capacitors, B Case 1000 pF Chip Capacitor, B C

Features

  • s Product, Go to: www. freescale. com MRF5S21090LR3 MRF5S21090LSR3 5 Freescale Semiconductor, Inc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5S21090LR3_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
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