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MRF5S21090LR3 - RF Power Field Effect Transistors

General Description

9.1 pF Chip Capacitor, B Case 8.2 pF Chip Capacitor, B Case 2.0 pF Chip Capacitor, B Case 0.1 µF Chip Capacitors, B Case 5.6 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 7.5 pF Chip Capacitor, B Case 1.2 pF Chip Capacitor, B Case 0.56 µF Chip Capacitors, B Case 1000 pF Chip Capacitor, B C

Key Features

  • s Product, Go to: www. freescale. com MRF5S21090LR3 MRF5S21090LSR3 5 Freescale Semiconductor, Inc.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S21090LSR3 RF Power Field Effect Transistors
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor
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MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor
MRF5S21130SR3 The RF MOSFET Line RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.