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MRF5S21090LSR3 - RF Power Field Effect Transistors

Download the MRF5S21090LSR3 datasheet PDF. This datasheet also covers the MRF5S21090LR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

9.1 pF Chip Capacitor, B Case 8.2 pF Chip Capacitor, B Case 2.0 pF Chip Capacitor, B Case 0.1 µF Chip Capacitors, B Case 5.6 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 7.5 pF Chip Capacitor, B Case 1.2 pF Chip Capacitor, B Case 0.56 µF Chip Capacitors, B Case 1000 pF Chip Capacitor, B C

Key Features

  • s Product, Go to: www. freescale. com MRF5S21090LR3 MRF5S21090LSR3 5 Freescale Semiconductor, Inc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5S21090LR3_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF5S21090HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S21090HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S21045 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S21045MBR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S21045MR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S21090LR3 RF Power Field Effect Transistors
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor
MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor
MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor
MRF5S21130SR3 The RF MOSFET Line RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.