Datasheet Summary
Freescale Semiconductor Technical Data
Document Number: MRF7S35120HS .. Rev. 1, 6/2008
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
- Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain
- 12 dB Drain Efficiency
- 40%
- Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF...