MRF7S35120HSR3 transistor equivalent, rf power field effect transistor.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operatio.
operating at frequencies between 3100 and 3500 MHz.
* Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout.
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