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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF859/D
The RF Line
NPN Silicon RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz. • Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics Output Power = 6.5 Watts CW Minimum Power Gain = 11.5 dB Minimum ITO = + 47 dBm Typical Noise Figure = 6 dB • Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 to 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.
MRF859 Datasheet
