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MRF941 - NPN Silicon Low Noise / High-Frequency Transistors

Key Features

  • excellent broadband linearity and is offered in a variety of packages.
  • Fully Implanted Base and Emitter Structure.
  • 9 Finger, 1.25 Micron Geometry with Gold Top Metal.
  • Gold Sintered Back Metal.
  • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel.
  • MRF947R, T3 is Emitter.
  • Base Pin out reversed. All electricals same as MRF947 Order this document by MMBR941LT1/D MMBR941 MRF941 MRF947 MRF.

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Full PDF Text Transcription for MRF941 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF941. For precise diagrams, and layout, please refer to the original PDF.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This...

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Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel • MRF947R, T3 is Emitter–Base Pin out reversed.

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