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MRFG35003MT1 - RF Power Field Effect Transistor

Description

7.5 pF Chip Capacitors, B Case 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors, A Case 100 pF Chip Capacitors, A Case 100 pF Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 3.9 µF Chip Capacitors, B Case 0.1 µF Chip Capacitors, B Case 22 µF, 35 V Tantalum Surface Mount Capacitors 0.7 pF

Features

  • .10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 S11 |S11| 0.868 0.866 0.866 0.868 0.865 0.864 0.865 0.864 0.861 0.863 0.862 0.860 0.862 0.861 0.860 0.862 0.861 0.860 0.861 0.862 0.862 0.861 0.862 0.861 0.861 0.861 0.859 0.858 0.859 0.859 0.857 0.857 0.855 0.855 0.855 0.854 0.853 0.851 0.851 0.848 0.849 0.845 0.841 0.841 ∠φ 136.03 134.67 133.02 131.47 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 300 mWatt Power Gain — 11.5 dB Efficiency — 25% MRFG35003MT1 3.5 GHz, 3 W, 12 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc... • 3 Watts P1dB @ 3.
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