MRFG35003MT1 Datasheet | Motorola Semiconductor

.. MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. - Typical W- CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power - 300 mWatt Power Gain - 11.5 dB Efficiency - 25% 3.5 GHz, 3 W, 12 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc... - 3 Watts P1dB @...