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Motorola Electronic Components Datasheet

MTB29N15E Datasheet

TMOS POWER FET

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
®
N–Channel
D
G
S
MTB29N15E
TMOS POWER FET
29 AMPERES
150 VOLTS
RDS(on) = 0.07 OHM
CASE 418B–03, Style 2
D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
150
150
± 20
± 40
29
19
102
125
1.0
2.5
– 55 to 150
421
1.0
62.5
50
260
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MTB29N15E Datasheet

TMOS POWER FET

No Preview Available !

MTB29N15E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
150
TBD
Vdc
— mV/°C
Zero Gate Voltage Drain Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
µAdc
— — 10
— — 100
— — 100 nAdc
Vdc
2.0 2.7 4.0
— TBD — mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 14.5 Adc)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 29 Adc)
(ID = 14.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 75 Vdc, ID = 29 Adc,
VGS = 10 Vdc,
RG = 9.1 )
Gate Charge
(VDS = 120 Vdc, ID = 29 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 29 Adc, VGS = 0 Vdc)
(IS = 29 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 29 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Ohms
0.055
0.07
Vdc
— — 2.4
— — 2.1
10 18 — mhos
2250
3150
pF
— 455 910
— 133 190
— 17.5 40
ns
— 108 220
— 90 180
— 85 170
— 78 110 nC
— 12 —
— 37 —
— 23 —
Vdc
— 0.92 1.3
— TBD —
— 174 —
ns
— 140 —
— 34 —
— 1.4 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
LD nH
— 3.5 —
— 4.5 —
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
LS
— 7.5 —
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTB29N15E
Description TMOS POWER FET
Maker Motorola
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