MTB29N15E Datasheet and Specifications PDF

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB29N15E/D Product Preview TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET.

418B
*03, Style 2 D2PAK MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
*to
*Source Voltage Drain
*to
*Gate Voltage (RGS = 1.0 MΩ) Gate
*to
*Source Voltage
* Continuous Gate
*to
*Source Voltage
* Non
*Repetitive (tp ≤ 10 ms) Drain Current
* Continuous Drain Current
* Continuous @ 100°C Drain.

MTB29N15E Preferred Device Power MOSFET 29 Amps, 150 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design al.

ms) Drain Current
* Continuous Drain Current
* Continuous @ 100°C Drain Current
* Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Operating and Storage Temperature Range VDSS VDGR VGS VGSM ID ID IDM PD 150 Vdc 150 Vdc ± 20 Vdc .