MTB29N15E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTB29N15E |
|---|---|
| Datasheet | MTB29N15E_Motorola.pdf |
| File Size | 76.35 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB29N15E/D Product Preview TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching...
View MTB29N15E datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTB29N15E | Power MOSFET | ON Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTB20N20E | TMOS POWER FET |
| MTB23P06E | TMOS POWER FET |
| MTB23P06V | TMOS POWER FET |
| MTB2N40E | TMOS POWER FET |
| MTB2N60E | TMOS POWER FET |
| MTB2P50E | TMOS POWER FET |
| MTB10N40E | TMOS POWER FET |
| MTB1306 | TMOS POWER FET |
| MTB15N06E | TMOS POWER FET |
| MTB15N06V | TMOS POWER FET |
