Datasheet4U Logo Datasheet4U.com

MTB2N60E - TMOS POWER FET

Features

  • proximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 700 600 C,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTB2N60E High Energy Power FET ON Semiconductor
MTB201209B070 Multilayer Ferrite Chip Beads MAGNETIC
MTB201209B102 Multilayer Ferrite Chip Beads MAGNETIC
MTB201209B121 Multilayer Ferrite Chip Beads MAGNETIC
MTB201209B221 Multilayer Ferrite Chip Beads MAGNETIC

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTB2N40E TMOS POWER FET
MTB20N20E TMOS POWER FET
MTB23P06E TMOS POWER FET
MTB23P06V TMOS POWER FET
MTB29N15E TMOS POWER FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Published: |