MTB50N06VL Overview
Key Features
- On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETs
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E–FET
- Continuous Gate–Source Voltage
- Non–Repetitive (tp ≤ 10 ms) Drain Current
- Continuous @ 25°C Drain Current
- Continuous @ 100°C Drain Current
- STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 5 Vdc, PEAK IL = 42 Apk, L = 0.3 mH, RG = 25 Ω) - Junction to Case - J
