MTB50N06VL
Key Features
- On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E-FET Predecessors Features Common to TMOS V and TMOS E-FETs
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E-FET
- Surface Mount Package Available in 16 mm 13-inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MΩ) Gate-to-Source Voltage - Continuous Gate-Source Voltage - Non-Repetitive (tp ≤ 10 ms) Drain Current - Continuous @ 25°C Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 5 Vdc, PEAK IL = 42 Apk, L = 0.3 mH, RG = 25 Ω) Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Thermal Resistance - Junction to Ambient (1) ™ Data Sheet V™
