MTB50N06VL Motorola Semiconductor Datasheet

MTB50N06VL Key Features

• On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E-FET Predecessors Features mon to TMOS V and TMOS E-FETs
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E-FET
• Surface Mount Package Available in 16 mm 13-inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC
• Continuous Gate-Source Voltage
• Non-Repetitive (tp ≤ 10 ms) Drain Current
• Continuous @ 25°C Drain Current
• Continuous @ 100°C Drain Current