MTB50P03HDL Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's Motorola Preferred Device P- Channel Enhancement- Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount ponents with higher power and lower RDS(on) capabilities. This advanced high- cell density HDTMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain- to- source diode with a fast...