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MTB50P03HDL TMOS POWER FET

MTB50P03HDL Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Moun.

MTB50P03HDL Features

* effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit el

MTB50P03HDL Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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Datasheet Details

Part number
MTB50P03HDL
Manufacturer
Motorola
File Size
182.06 KB
Datasheet
MTB50P03HDL_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB50P03HDL-like datasheet