MTB55N06Z datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTB55N06Z |
|---|---|
| Datasheet | MTB55N06Z_Motorola.pdf |
| File Size | 146.61 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
|
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB55N06Z/D Advance Information TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high...
View MTB55N06Z datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTB55N06Z | Power MOSFET | ON Semiconductor |
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| MTB15N06V | TMOS POWER FET |
