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MTD6P10E - TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

Features

  • ed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C GATE.
  • TO.
  • SOURCE OR DRAIN.
  • TO.
  • SOURCE.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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MTD6N10 TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6P10E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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