MTD6P10E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6P10E Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast...