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MTD6P10E Datasheet Tmos Power Fet 6.0 Amperes 100 Volts Rds(on) = 0.66 Ohm

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.

MTD6P10E datasheet preview

Datasheet Details

Part number	MTD6P10E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	261.77 KB
Description	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
Datasheet	MTD6P10E_Motorola.pdf

Key Features

ed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C GATE.
TO.
SOURCE OR DRAIN.
TO.
SOURCE.

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