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Motorola Electronic Components Datasheet

MTP10N10E Datasheet

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

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MTP10N10E pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP10N10E/D
Designer's Data Sheet
TMOS IV
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced “E” series of TMOS power MOSFETs is designed
to withstand high energy in the avalanche and commutation
modes. These new energy efficient devices also offer drain–to–
source diodes with fast recovery times. Designed for low voltage,
high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits where diode speed and commutating safe
operating area are critical, and offer additional safety margin
against unexpected voltage transients.
Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode — Unclamped Inductive Switching (UIS)
Energy Capability Specified at 100°C
Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
Drain Current — Continuous
Drain Current — Pulsed
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
MTP10N10E
®
D
TMOS POWER FETs
10 AMPERES
100 VOLTS
RDS(on) = 0.25 OHM
S
CASE 221A–06, Style 5
TO–220AB
Symbol
VDSS
VDGR
VGS
ID
IDM
PD
TJ, Tstg
RθJC
RθJA
TL
Value
100
100
± 20
10
25
75
0.6
– 65 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
1.67 °C/W
62.5
275 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MTP10N10E Datasheet

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

No Preview Available !

MTP10N10E pdf
MTP10N10E
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0)
(VDS = 0.8 Rated VDSS, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
TJ = 100°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc)
Drain–Source On–Voltage (VGS = 10 V)
(ID = 10 Adc)°
(ID = 5.0 Adc, TJ = 100°C)
Forward Transconductance (VDS = 15 V, ID = 5.0 A)
DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
Unclamped Drain–to–Source Avalanche Energy See Figures 14 and 15
(ID = 25 A, VDD = 25 V, TC = 25°C, Single Pulse, Non–repetitive)
(ID = 10 A, VDD = 25 V, TC = 25°C, P.W. 200 µs, Duty Cycle 1%)
(ID = 4.0 A, VDD = 25 V, TC = 100°C, P.W. 200 µs, Duty Cycle 1%)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
See Figure 16
SWITCHING CHARACTERISTICS* (TJ = 100°C)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 25 V, ID = 5.0 A,
RG = 50 )
See Figure 9
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDS = 0.8 Rated VDSS,
ID = Rated ID, VGS = 10 V)
See Figures 17 and 18
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
Forward Turn–On Time
Reverse Recovery Time
(IS = Rated ID
VGS = 0)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Symbol
Min Max Unit
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VDS(on)
gFS
WDSR
100
2.0
1.5
4.0
— Vdc
µA
10
80
100 nAdc
100 nAdc
Vdc
4.5
4.0
0.25 Ohm
Vdc
2.7
2.4
— mhos
mJ
60
100
40
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
Ld
Ls
— 600 pF
— 400
— 100
15 (Typ)
8.0 (Typ)
7.0 (Typ)
50
80
100
80
30
ns
nC
1.4 (Typ)
1.7
Vdc
Limited by stray inductance
70 (Typ)
ns
3.5 (Typ)
4.5 (Typ)
7.5 (Typ)
nH
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTP10N10E
Description TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
Maker Motorola
Total Page 8 Pages
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