MTP23P06V Datasheet TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

MTP23P06V tmos power fet 23 amperes 60 volts rds(on) = 0.120 ohm by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MTP23P06V
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	192.71 KB
Description	TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM
Datasheet	MTP23P06V Datasheet

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.

Key Features

of TMOS V.
On.
resistance Area Product about One.
half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
Faster Switching than E.
FET Predecessors Features Common to TMOS V and TMOS E.
FETS.
Avalanche Energy Specified.
IDSS and VDS(on) Specified at Elevated Temperature.
Static Parameters are the Same for both TMOS V and TMOS E.
FET.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	MTP23P06V	Power MOSFET 23 Amps	ON Semiconductor

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