MTP3N100E Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's .. TMOS E-FET .™ Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate ™ Data Sheet Motorola Preferred Device This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. - Robust High Voltage Termination - Avalanche Energy Specified - Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode - Diode is Characterized for Use in Bridge Circuits - IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM ® CASE 221A- 06, Style 5 TO- 220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous Gate- Source Voltage - Non- Repetitive (tp ≤ 10 ms) Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 150 Vdc, VGS = 10 Vdc, IL = 7.0 Apk, L = 10 m H, RG = 25 Ω) Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 1000...