MTP3N50E Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's Motorola Preferred Device N- Channel Enhancement- Mode Silicon Gate This advanced high voltage TMOS E- FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain- to- source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. - Avalanche Energy Capability Specified at Elevated Temperature - Low Stored Gate Charge for Efficient Switching - Internal Source- to- Drain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode - Source- to- Drain Diode Recovery Time parable to Discrete Fast Recovery Diode TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS ® CASE 221A- 06, Style 5 TO- 220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous Gate- Source Voltage - Non- repetitive (tp ≤ 50 µs) Drain Current - Continuous Drain Current - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 500 500 ± 20 ± 40 3.0 10 50 0.4 - 65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C °C UNCLAMPED DRAIN- TO- SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain- to- Source Avalanche Energy - TJ = 25°C Single Pulse Drain- to- Source Avalanche Energy - TJ = 100°C Repetitive Pulse Drain- to- Source Avalanche Energy WDSR (1) WDSR (2) 210 33 5.0 m J THERMAL CHARACTERISTICS Thermal Resistance - Junction to...