MTP3N50E - TMOS POWER FET

Product Overview

Motorola

Part number	MTP3N50E
Manufacturer	Motorola
File Size	251.88 KB
Description	TMOS POWER FET
Datasheet	MTP3N50E Datasheet
Additional preview pages of the MTP3N50E datasheet.

Device stresses increase with commutation speed, so tfrr is specified with a minimum value. Faster commutation speeds require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain.
to.
source voltage that the device must sustain during commutation; IFM is the maximum forward source-drai.

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Published: Jul 26, 2005 |