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MTP3N50E Datasheet - ON Semiconductor

MTP3N50E - TMOS E-FET

MTP3N50E Designer’s™ Data Sheet TMOS E FET.™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the

MTP3N50E-ONSemiconductor.pdf

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Datasheet Details

Part number:

MTP3N50E

Manufacturer:

ON Semiconductor ↗

File Size:

230.43 KB

Description:

Tmos e-fet.

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