MTP3N25E TMOS POWER FET 3.0 AMPERES 250 VOLTS

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N25E/D Designer's www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transisto.

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Datasheet Specifications

Part number: MTP3N25E
Manufacturer: Motorola
File Size: 177.46 KB
Datasheet: MTP3N25E_Motorola.pdf
Description: TMOS POWER FET 3.0 AMPERES 250 VOLTS

Features

* ing reduces switching losses. 800 Ciss 700 C, CAPACITANCE (pF) 600 500 Crss 400 300 200 100 0 10 VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motoro

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

MTP3N25E Distributors

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MTP3N25E TMOS POWER FET 3.0 AMPERES 250 VOLTS Motorola

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