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MTP3N25E Datasheet - Motorola

MTP3N25E TMOS POWER FET 3.0 AMPERES 250 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N25E/D Designer's www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate ™ Data Sheet MTP3N25E Motorola Preferred Device This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low vo.

MTP3N25E Features

* ing reduces switching losses. 800 Ciss 700 C, CAPACITANCE (pF) 600 500 Crss 400 300 200 100 0 10 VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motoro

MTP3N25E_Motorola.pdf

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Datasheet Details

Part number:

MTP3N25E

Manufacturer:

Motorola

File Size:

177.46 KB

Description:

Tmos power fet 3.0 amperes 250 volts.

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MTP3N25E MTP3N25E TMOS POWER FET 3.0 AMPERES 250 VOLTS Motorola

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