* ing reduces switching losses. 800 Ciss 700 C, CAPACITANCE (pF) 600 500 Crss 400 300 200 100 0 10 VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motoro
MTP3N25E Datasheet (177.46 KB)
MTP3N25E
Motorola
177.46 KB
Tmos power fet 3.0 amperes 250 volts.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N25E/D Designer's www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transisto.
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