MTP3N25E - TMOS POWER FET 3.0 AMPERES 250 VOLTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N25E/D Designer's www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate ™ Data Sheet MTP3N25E Motorola Preferred Device This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low vo
MTP3N25E Features
* ing reduces switching losses. 800 Ciss 700 C, CAPACITANCE (pF) 600 500 Crss 400 300 200 100 0 10 VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motoro
