Datasheet Specifications
- Part number
- MTP3N50E
- Manufacturer
- Motorola
- File Size
- 251.88 KB
- Datasheet
- MTP3N50E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motoro.
Features
* Device stresses increase with commutation speed, so tfrr is specified with a minimum value. Faster commutation speeds require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr asApplications
* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.MTP3N50E Distributors
📁 Related Datasheet
📌 All Tags