MTP3N50E Datasheet - Motorola

MTP3N50E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motoro.

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Datasheet Details

Part number:

MTP3N50E

Manufacturer:

Motorola

File Size:

251.88 KB

Description:

TMOS POWER FET

Features

* Device stresses increase with commutation speed, so tfrr is specified with a minimum value. Faster commutation speeds require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as

Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

MTP3N50E Distributors

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MTP3N50E TMOS POWER FET Motorola

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