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MTP3N50E - TMOS POWER FET

MTP3N50E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motoro.

MTP3N50E Features

* Device stresses increase with commutation speed, so tfrr is specified with a minimum value. Faster commutation speeds require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as

MTP3N50E Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

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Datasheet Details

Part number
MTP3N50E
Manufacturer
Motorola
File Size
251.88 KB
Datasheet
MTP3N50E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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