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MTP3N50E

TMOS POWER FET

MTP3N50E Features

* Device stresses increase with commutation speed, so tfrr is specified with a minimum value. Faster commutation speeds require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as

MTP3N50E Datasheet (251.88 KB)

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Datasheet Details

Part number:

MTP3N50E

Manufacturer:

Motorola

File Size:

251.88 KB

Description:

Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motoro.

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MTP3N50E TMOS POWER FET Motorola

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