Datasheet Specifications
- Part number
- MTP3N120E
- Manufacturer
- Motorola
- File Size
- 200.62 KB
- Datasheet
- MTP3N120E_Motorola.pdf
- Description
- TMOS POWER FET 3.0 AMPERES 1000 VOLTS
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet www.DataSheet4U.com TMOS E-FET .™ Power Field Effe.
Features
* nto an inductive load; however, snubbing reduces switching losses. 2800 VDS = 0 V 2400 C, CAPACITANCE (pF) 2000 1600 1200 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 10 15 Crss Ciss VGS = 0 V TJ = 25°C 10,000 VGS = 0 V TJ = 25°C Ciss C, CAPACITANCE (pF) 1,000 Ciss 100 Coss Crss 20 25 10 10 100 DApplications
* such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.MTP3N120E Distributors
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