Datasheet Details
- Part number
- MTP3N120E
- Manufacturer
- Motorola
- File Size
- 200.62 KB
- Datasheet
- MTP3N120E_Motorola.pdf
- Description
- TMOS POWER FET 3.0 AMPERES 1000 VOLTS
MTP3N120E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet www.DataSheet4U.com TMOS E-FET .™ Power Field Effe.
MTP3N120E Features
* nto an inductive load; however, snubbing reduces switching losses. 2800 VDS = 0 V 2400 C, CAPACITANCE (pF) 2000 1600 1200 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 10 15 Crss Ciss VGS = 0 V
TJ = 25°C
10,000 VGS = 0 V TJ = 25°C Ciss C, CAPACITANCE (pF) 1,000
Ciss
100
Coss Crss
20
25
10
10
100 D
MTP3N120E Applications
* such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability
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