MTP3N120E Datasheet - Motorola

MTP3N120E, TMOS POWER FET 3.0 AMPERES 1000 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet www.DataSheet4U.com TMOS E-FET .™ Power Field Effe.

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Datasheet Details

Part number:

MTP3N120E

Manufacturer:

Motorola

File Size:

200.62 KB

Description:

TMOS POWER FET 3.0 AMPERES 1000 VOLTS

Features

* nto an inductive load; however, snubbing reduces switching losses. 2800 VDS = 0 V 2400 C, CAPACITANCE (pF) 2000 1600 1200 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 10 15 Crss Ciss VGS = 0 V TJ = 25°C 10,000 VGS = 0 V TJ = 25°C Ciss C, CAPACITANCE (pF) 1,000 Ciss 100 Coss Crss 20 25 10 10 100 D

Applications

* such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

MTP3N120E Distributors

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MTP3N120E TMOS POWER FET 3.0 AMPERES 1000 VOLTS Motorola

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