MTP3N120E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain to source diode with fast recovery time.
Designed for high voltage, high speed
MTP3N120E Features
* nto an inductive load; however, snubbing reduces switching losses. 2800 VDS = 0 V 2400 C, CAPACITANCE (pF) 2000 1600 1200 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 10 15 Crss Ciss VGS = 0 V TJ = 25°C 10,000 VGS = 0 V TJ = 25°C Ciss C, CAPACITANCE (pF) 1,000 Ciss 100 Coss Crss 20 25 10 10 100 D
