* nto an inductive load; however, snubbing reduces switching losses. 2800 VDS = 0 V 2400 C, CAPACITANCE (pF) 2000 1600 1200 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 10 15 Crss Ciss VGS = 0 V TJ = 25°C 10,000 VGS = 0 V TJ = 25°C Ciss C, CAPACITANCE (pF) 1,000 Ciss 100 Coss Crss 20 25 10 10 100 D
MTP3N120E Datasheet (200.62 KB)
MTP3N120E
Motorola
200.62 KB
Tmos power fet 3.0 amperes 1000 volts.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's Data Sheet
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TMOS E-FET .™ Power Field Effe.
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·FEATURES ·With TO-220 packaging ·High speed switching ·Very high mutation ruggedness ·Easy to use ·100% avalanche .
