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MTP3N100E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS

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Features

  • d components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2800 Ciss 2400 2000 1600 Crss 1200 800 VDS = 0 V VGS = 0 V TJ = 25°C 10000 VGS = 0 V Ciss 1000 C,.

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Datasheet Details

Part number MTP3N100E
Manufacturer Motorola
File Size 175.15 KB
Description TMOS POWER FET 3.0 AMPERES 1000 VOLTS
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate ™ Data Sheet MTP3N100E Motorola Preferred Device This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
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