MTP3N100E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate ™ Data Sheet MTP3N100E Motorola Preferred Device This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.
In addition, this advanced TMOS E FET is designed to withstand high ener
MTP3N100E Features
* d components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2800 Ciss 2400 2000 1600 C
