MTP3N100E TMOS POWER FET 3.0 AMPERES 1000 VOLTS

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transist.

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Datasheet Specifications

Part number: MTP3N100E
Manufacturer: Motorola
File Size: 175.15 KB
Datasheet: MTP3N100E_Motorola.pdf
Description: TMOS POWER FET 3.0 AMPERES 1000 VOLTS

Features

* d components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2800 Ciss 2400 2000 1600 C

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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MTP3N100E TMOS POWER FET 3.0 AMPERES 1000 VOLTS Motorola

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