* n) 1 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN
* TO
* SOURCE DIODE CHARACTERISTICS 12 VGS = 0 V 10 TJ = 25°C IS, SOURCE CURRENT (AMPS) 8 6 4 2 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0 VSD, SOURCE
MTP3055VL Datasheet (197.51 KB)
MTP3055VL
197.51 KB
Power mosfet.
MTP3055VL
Preferred Device
Power MOSFET 12 Amps, 60 Volts, Logic Level
N
*Channel TO
*220
This Power MOSFET is designed to withstand hig.
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