MTP3055V - N-Channel Enhancement Mode Field Effect Transistor
MTP3055V Features
* 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. '
* ' 6 72
