MTP3055V Datasheet, Transistor, Fairchild Semiconductor

MTP3055V Features

• Transistor • 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an ex

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MTP3055V

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Fairchild Semiconductor

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power

MTP3055V Application

• Applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comp

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MTP3055V

Fairchild Semiconductor

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