MTP3055V N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Description

MTP3055V May 1999 MTP3055V N-Channel Enhancement Mode Field Effect Transistor General .
This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.

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Datasheet Specifications

Part number: MTP3055V
Manufacturer: Fairchild Semiconductor
File Size: 251.89 KB
Datasheet: MTP3055V_FairchildSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. '
* ' 6 72

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MTP3055V N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor

Fairchild Semiconductor MTP3055V-like datasheet