MTP30P06V Datasheet (ON Semiconductor)

MTP30P06V, Power MOSFET 30 Amps

www.DataSheet4U.com MTP30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against un

MTP30P06V Features

* D = 30 A 50 Q1 Q2 QT 30 VGS 27 24 21 18 15 12 9 6 3 0 60 1000 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = 25°C ID = 30 A VDD = 30 V VGS = 10 V t, TIME (ns) 100 td(off) tf tr td(on) 10 1 1 10 RG, GATE RESISTANCE (OHMS) 100 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate

* To

* Source a