MTP10N10EL Datasheet - ON Semiconductor

MTP10N10EL Power MOSFET

MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed a.

MTP10N10EL Features

* Avalanche Energy Specified

* Source

* to

* Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at Elevated Temperature

* Pb

* Free Package i

MTP10N10EL_ONSemiconductor.pdf