MTP15N06V Datasheet - ON Semiconductor

MTP15N06V Power MOSFET

MTP15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage trans.

MTP15N06V Features

* on versus Gate Resistance DRAIN

* TO

* SOURCE DIODE CHARACTERISTICS 15 VGS = 0 V TJ = 25°C 12 100 IS, SOURCE CURRENT (AMPS) 9 6 3 0 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE

* TO

* DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA Th

MTP15N06V-ONSemiconductor.pdf