MTP15N06VL - TMOS POWER FET
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP15N06VL/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for lo
MTP15N06VL Features
* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors G S CASE 221A
* 06, Style 5 TO
* 220AB Features Common to TMOS V and TMOS E
