* 2 Q3 1 0 05 VDS 10 15 TJ = 25°C ID = 20 A 6 3 0 20 25 30 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate
* To
* Source and Drain
* To
* Source Voltage versus Total Charge VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 100 10 TJ = 25°C ID = 20 A VDD = 30 V VGS =
MTP20N06V Datasheet (199.34 KB)
MTP20N06V
199.34 KB
Power mosfet.
MTP20N06V
Preferred Device
Power MOSFET 20 Amps, 60 Volts
N
*Channel TO
*220
This Power MOSFET is designed to withstand high energy in t.
📁 Related Datasheet
MTP20N06V TMOS POWER FET (Motorola)
MTP20N08 N-Channel Power MOSFET (Fairchild Semiconductor)
MTP20N10 N-Channel Power MOSFET (Fairchild Semiconductor)
MTP20N15E N-Channel Power MOSFET (ON Semiconductor)
MTP20N20E TMOS POWER FET (Motorola)
MTP2010J3 P-Channel Logic Level Enhancement Mode MOSFET (CYStech Electronics)
MTP2071M3 20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
MTP20P06 Power Field Effect Transistor (Motorola Semiconductor)
MTP2301N3 20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
MTP2301S3 20V P-Channel Enhancement Mode MOSFET (CYStech)
