MTP20N06V Datasheet - ON Semiconductor

MTP20N06V Power MOSFET

MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage trans.

MTP20N06V Features

* 2 Q3 1 0 05 VDS 10 15 TJ = 25°C ID = 20 A 6 3 0 20 25 30 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate

* To

* Source and Drain

* To

* Source Voltage versus Total Charge VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 100 10 TJ = 25°C ID = 20 A VDD = 30 V VGS =

MTP20N06V-ONSemiconductor.pdf