MTP2301S3 Datasheet | CYStech

Features - Advanced trench process technology - High density cell design for ultra low on resistance - Excellent thermal and electrical capabilities - pact and low profile SOT-323 package - Pb-free lead plating and halogen-free package -20V -1.6A 75mΩ(typ.) 113mΩ(typ.) Equivalent Circuit Outline SOT-323 D G：Gate S：Source D：Drain Ordering Information Device MTP2301S3-0-T1-G Package Shipping SOT-323 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2018.10.17 Page No. : 2/8 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C, VGS=-4.5V Continuous Drain Current @TA=70°C, VGS=-4.5V Pulsed Drain Current Maximum Power Dissipation Ta=25℃ Ta=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM Tj ; Tstg Limits -20 ±8 -1.6 -1.3 -10 340 (Note) 218 (Note) -55~+150 Unit...