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MTP8107X8 - P-Channel Enhancement Mode MOSFET

Key Features

  • Low on-resistance.
  • Simple drive requirement.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.5V, ID=-3A -30V -6.6A -5.3A 19.5mΩ 30mΩ Equivalent Circuit MTP8107X8 Outline DFNWB3×2-8L-D G：Gate S：Source D：Drain Pin #1 Pin #1 Ordering Information Device MTP8107X8-0-T1-G P.

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Datasheet Details

Part number MTP8107X8
Manufacturer CYStech
File Size 371.37 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTP8107X8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET MTP8107X8 Features • Low on-resistance • Simple drive requirement • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.5V, ID=-3A -30V -6.6A -5.3A 19.