* operated into an inductive load; however, snubbing reduces switching losses. 5000 Ciss VDS = 0 V VGS = 0 V TJ = 25°C m taS hee t4U .co 4000 C, CAPACITANCE (pF) 3000 Crss Ciss 2000 1000 0 10 Coss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
MTP20N20E Datasheet (173.64 KB)
MTP20N20E
Motorola
173.64 KB
Tmos power fet.
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP20N20E/D
Designer's
TMOS E-FET .™ Power Field Effect Transist.
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