MTP20N20E - TMOS POWER FET
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power s
MTP20N20E Features
* operated into an inductive load; however, snubbing reduces switching losses. 5000 Ciss VDS = 0 V VGS = 0 V TJ = 25°C m taS hee t4U .co 4000 C, CAPACITANCE (pF) 3000 Crss Ciss 2000 1000 0 10 Coss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
