Datasheet Specifications
- Part number
- MTP20N20E
- Manufacturer
- Motorola
- File Size
- 173.64 KB
- Datasheet
- MTP20N20E_Motorola.pdf
- Description
- TMOS POWER FET
Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N20E/D Designer's TMOS E-FET .™ Power Field Effect Transist.
Features
* operated into an inductive load; however, snubbing reduces switching losses. 5000 Ciss VDS = 0 V VGS = 0 V TJ = 25°C m taS hee t4U . co 4000 C, CAPACITANCE (pF) 3000 Crss Ciss 2000 1000 0 10 Coss 5 VGS 0 VDS 5 10 15 20 25 GATEApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTP20N20E Distributors
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