MTP20N06V - TMOS POWER FET
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N06V/D ™ TMOS V ™ Designer's Data Sheet MTP20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 vo
MTP20N06V Features
* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETS
* Avalanche Energy Specified
