MTP27N10E Datasheet (Motorola) - TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

MTP27N10E, TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP27N10E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switchin

MTP27N10E Features

* an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3500 3000 C, CAPACITANCE (pF) 2500 2000 1500 1000 500 0 15 Crss Ciss VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 10 5 VGS 0 VDS 5 10 15 20 25 GATE