MTP27N10E TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP27N.

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Datasheet Specifications

Part number: MTP27N10E
Manufacturer: Motorola
File Size: 230.69 KB
Datasheet: MTP27N10E_Motorola.pdf
Description: TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

Features

* an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3500 3000 C, CAPACITANCE (pF) 2500 2000 1500 1000 500 0 15 Crss Ciss VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 10 5 VGS 0 VDS 5 10 15 20 25 GATE

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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MTP27N10E TMOS POWER FET AMPERES 100 VOLTS RDSon 0.07 OHM Motorola

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