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MTP27N10E TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

MTP27N10E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP27N.

MTP27N10E Features

* an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3500 3000 C, CAPACITANCE (pF) 2500 2000 1500 1000 500 0 15 Crss Ciss VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 10 5 VGS 0 VDS 5 10 15 20 25 GATE

MTP27N10E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTP27N10E
Manufacturer
Motorola
File Size
230.69 KB
Datasheet
MTP27N10E_Motorola.pdf
Description
TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

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TMOS POWER FET AMPERES 100 VOLTS RDSon 0.07 OHM Motorola
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