MTP23P06V Datasheet (Motorola) - TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM

MTP23P06V, TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.

Designed for low

MTP23P06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors Features Common to TMOS V and TMOS E

* FETS

* Avalanche Energy Specified