* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1.7A -60V -3.5A 72mΩ(typ
MTP2311N3 Datasheet (353.12 KB)
MTP2311N3
CYStech Electronics
353.12 KB
-60v p-channel enhancement mode mosfet.
CYStech Electronics Corp.
-60V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C733N3 Issued Date : 2011.12.27 Revised Date : Page No. : 1/8
MTP2311N3.
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