MTP2311N3 - -60V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics

Datasheet Details

Part number	MTP2311N3
Manufacturer	CYStech Electronics
File Size	353.12 KB
Description	-60V P-CHANNEL Enhancement Mode MOSFET
Datasheet	MTP2311N3-CYStechElectronics.pdf

Low gate charge.
Compact and low profile SOT-23 package.
Advanced trench process technology.
High density cell design for ultra low on resistance.
Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1.7A -60V -3.5A 72mΩ(typ) 98mΩ(typ) Symbol MTP2311N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°.

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Published: May 25, 2014 |