MTP2311N3 -60V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics

Description

CYStech Electronics Corp.-60V P-CHANNEL Enhancement Mode MOSFET Spec.No.: C733N3 Issued Date : 2011.12.27 Revised Date : Page No.: 1/8 MTP2311N3.

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Datasheet Specifications

Part number: MTP2311N3
Manufacturer: CYStech Electronics
File Size: 353.12 KB
Datasheet: MTP2311N3-CYStechElectronics.pdf
Description: -60V P-CHANNEL Enhancement Mode MOSFET

Features

* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1.7A -60V -3.5A 72mΩ(typ

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2311N3 CYStek Product Specification

MTP2311N3 Distributors

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MTP2311N3 -60V P-CHANNEL Enhancement Mode MOSFET CYStech Electronics

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