MTP2311N3 Datasheet, Mosfet, CYStech Electronics

MTP2311N3 Features

  • Mosfet
  • Low gate charge
  • Compact and low profile SOT-23 package
  • Advanced trench process technology
  • High density cell design for ultra low on resistance

PDF File Details

Part number:

MTP2311N3

Manufacturer:

CYStech Electronics

File Size:

353.12kb

Download:

📄 Datasheet

Description:

-60v p-channel enhancement mode mosfet.

Datasheet Preview: MTP2311N3 📥 Download PDF (353.12kb)
Page 2 of MTP2311N3 Page 3 of MTP2311N3

MTP2311N3 Application

  • Applications or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or applicat

TAGS

MTP2311N3
-60V
P-CHANNEL
Enhancement
Mode
MOSFET
CYStech Electronics

📁 Related Datasheet

MTP2311AV8 - P-Channel Enhancement Mode MOSFET (CYStech Electronics)
CYStech Electronics Corp. Spec. No. : C733V8 Issued Date : 2016.03.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET MTP2311AV8 B.

MTP2311V8 - P-Channel Enhancement Mode MOSFET (CYStech Electronics)
CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET Spec. No. : C733V8 Issued Date : 2013.06.24 Revised Date : Page No. : 1/9 MTP2311V8 Desc.

MTP2317N3 - 20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 .

MTP2301N3 - 20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET .

MTP2301S3 - 20V P-Channel Enhancement Mode MOSFET (CYStech)
CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2018.10.17 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET.

MTP2301V3 - -20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
CYStech Electronics Corp. -20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C322V3 Issued Date : 2012.07.18 Revised Date : Page No. : 1/9 MTP2301V3.

MTP23N05L - Power Field Effect Transistor (Motorola)
.

MTP23P06 - Power Field Effect Transistor (Motorola)
.

MTP23P06V - TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM (Motorola)
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology d.

MTP23P06V - Power MOSFET 23 Amps (ON Semiconductor)
MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche an.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts