MTP2311N3 Datasheet - CYStech Electronics

MTP2311N3 -60V P-CHANNEL Enhancement Mode MOSFET

MTP2311N3 Features

* Low gate charge

* Compact and low profile SOT-23 package

* Advanced trench process technology

* High density cell design for ultra low on resistance

* Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1.7A -60V -3.5A 72mΩ(typ

Datasheet Details

MTP2311N3

CYStech Electronics

353.12 KB

-60v p-channel enhancement mode mosfet.

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TAGS

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