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MTP2317N3 20V P-CHANNEL Enhancement Mode MOSFET

MTP2317N3 Description

CYStech Electronics Corp.20V P-CHANNEL Enhancement Mode MOSFET Spec.No.: C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No.: 1/9 .

MTP2317N3 Features

* Advanced trench process technology
* High density cell design for ultra low on resistance
* Excellent thermal and electrical capabilities
* Compact and low profile SOT-23 package
* Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-

MTP2317N3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2317N3 CYStek Product Specification

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Datasheet Details

Part number
MTP2317N3
Manufacturer
CYStech Electronics
File Size
362.17 KB
Datasheet
MTP2317N3-CYStechElectronics.pdf
Description
20V P-CHANNEL Enhancement Mode MOSFET

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20V P-CHANNEL Enhancement Mode MOSFET CYStech Electronics
CYStech Electronics MTP2317N3-like datasheet