* Advanced trench process technology
* High density cell design for ultra low on resistance
* Excellent thermal and electrical capabilities
* Compact and low profile SOT-23 package
* Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-
MTP2317N3 Datasheet (362.17 KB)
MTP2317N3
CYStech Electronics
362.17 KB
20v p-channel enhancement mode mosfet.
CYStech Electronics Corp.
20V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9
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