* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package Equivalent Circuit MTP2311AV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTP2311AV8-0-T6-G Package DFN3×3 (Pb-free
MTP2311AV8 Datasheet (389.98 KB)
MTP2311AV8
CYStech Electronics
389.98 KB
P-channel enhancement mode mosfet.
CYStech Electronics Corp.
Spec. No. : C733V8 Issued Date : 2016.03.15 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTP2311AV8
B.
📁 Related Datasheet
MTP2311N3 -60V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
MTP2311V8 P-Channel Enhancement Mode MOSFET (CYStech Electronics)
MTP2317N3 20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
MTP2301N3 20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
MTP2301S3 20V P-Channel Enhancement Mode MOSFET (CYStech)
MTP2301V3 -20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
MTP23N05L Power Field Effect Transistor (Motorola)
MTP23P06 Power Field Effect Transistor (Motorola)
MTP23P06V TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM (Motorola)
MTP23P06V Power MOSFET 23 Amps (ON Semiconductor)
