MTP2301V3 - -20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics

Datasheet Details

Part number	MTP2301V3
Manufacturer	CYStech Electronics
File Size	417.36 KB
Description	-20V P-CHANNEL Enhancement Mode MOSFET
Datasheet	MTP2301V3-CYStechElectronics.pdf

Advanced trench process technology.
High density cell design for ultra low on resistance.
Excellent thermal and electrical capabilities.
Compact and low profile TSOT-23 package.
Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=-4.5V, ID=-2.8A RDSON(MAX)@VGS=-2.5V, ID=-2A -20V -3.4A 79mΩ(typ. ) 116mΩ(typ. ) Equivalent Circuit MTP2301V3 Outline TSOT-23 D G G：Gate S：Source D：Drain S Absolute Maximum Ratings (Ta=25°C) Parameter.

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Published: May 25, 2014 |