* sus Gate Resistance DRAIN
* TO
* SOURCE DIODE CHARACTERISTICS 25 20 15 10 5 0 TJ = 25°C VGS = 0 V I S , SOURCE CURRENT (AMPS) 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING ARE
MTP23P06V Datasheet (80.00 KB)
MTP23P06V
80.00 KB
Power mosfet 23 amps.
MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P Channel TO 220 This Power MOSFET is designed to withstand high energy in .
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