MTP23P06V Datasheet - ON Semiconductor

MTP23P06V Power MOSFET 23 Amps

MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage tran.

MTP23P06V Features

* sus Gate Resistance DRAIN

* TO

* SOURCE DIODE CHARACTERISTICS 25 20 15 10 5 0 TJ = 25°C VGS = 0 V I S , SOURCE CURRENT (AMPS) 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING ARE

MTP23P06V_ONSemiconductor.pdf