MTP2N60E Power Field Effect Transistor

ON Semiconductor

Description

MTP2N60E Designer’s™ Data Sheet TMOS E *FET.™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This high .

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Datasheet Specifications

Part number: MTP2N60E
Manufacturer: ON Semiconductor ↗
File Size: 206.15 KB
Datasheet: MTP2N60E-ONSemiconductor.pdf
Description: Power Field Effect Transistor

Features

* ss 300 200 Coss 100 Crss 0 10 5 0 5 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation 1000 Ciss 100 Coss 10 1 TJ = 25°C VGS = 0 0.1 10 Crss 100 10 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Fig

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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MTP2N60E Power Field Effect Transistor ON Semiconductor

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