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MTP2N60E - Power Field Effect Transistor

MTP2N60E Description

MTP2N60E Designer’s™ Data Sheet TMOS E *FET.™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This high .

MTP2N60E Features

* ss 300 200 Coss 100 Crss 0 10 5 0 5 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation 1000 Ciss 100 Coss 10 1 TJ = 25°C VGS = 0 0.1 10 Crss 100 10 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Fig

MTP2N60E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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