Datasheet Specifications
- Part number
- MTP2N40E
- Manufacturer
- Motorola
- File Size
- 182.51 KB
- Datasheet
- MTP2N40E_Motorola.pdf
- Description
- TMOS POWER FET
Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N40E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
Features
* Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C 400 C, CAPACITANCE (pF) C, CAPACITANCE (pF) Ciss 300 Ciss 200 Crss 100 Ciss Coss 10 Crss 100 0Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTP2N40E Distributors
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