MTP2N40E Datasheet (Motorola)

MTP2N40E, TMOS POWER FET

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N40E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

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MTP2N40E Features

* Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C 400 C, CAPACITANCE (pF) C, CAPACITANCE (pF) Ciss 300 Ciss 200 Crss 100 Ciss Coss 10 Crss 100 0

* 10 Crss

* 5 VGS 0 VD