Datasheet Specifications
- Part number
- MTP2N50E
- Manufacturer
- Motorola
- File Size
- 197.48 KB
- Datasheet
- MTP2N50E_Motorola.pdf
- Description
- Power MOSFET
Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N50E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
Features
* bbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 700 VDS = 0 V 600 Ciss C, CAPACITANCE (pF) C, CAPACITANCE (pF) 500 400 300 200 100 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 Crss Ciss VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTP2N50E Distributors
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