MTP2N60E Datasheet (Motorola)

MTP2N60E, TMOS POWER FET

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N60E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

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MTP2N60E Features

* ly snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 700 600 C, CAPACITANCE (pF) 500 400 300 200 100 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1000 Ciss C, CAPACITANCE (pF) 100 Coss 10 Crss 1 TJ = 25°C VGS = 0 10 1