* ly snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 700 600 C, CAPACITANCE (pF) 500 400 300 200 100 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1000 Ciss C, CAPACITANCE (pF) 100 Coss 10 Crss 1 TJ = 25°C VGS = 0 10 1
MTP2N60E Datasheet (184.75 KB)
MTP2N60E
Motorola
184.75 KB
Tmos power fet.
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N60E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
📁 Related Datasheet
MTP2N60 Power Field Effect Transistor (Motorola)
MTP2N60E Power Field Effect Transistor (ON Semiconductor)
MTP2N20 POWER FIELD EFFECT TRANSISTOR (Motorola)
MTP2N35 N-Channel MOSFET (ART CHIP)
MTP2N40 (MTP2N35 / MTP2N40) N-Channel Power MOSFETs (Fairchild Semiconductor)
MTP2N40E TMOS POWER FET (Motorola)
MTP2N40E Power Field Effect Transistor (ON Semiconductor)
MTP2N45 N-Channel Power MOSFET (ART CHIP)
MTP2N45 N-Channel MOSFET (Fairchild Semiconductor)
MTP2N50 N-Channel Power MOSFET (ART CHIP)
