MTP2N40E Datasheet - ON Semiconductor

MTP2N40E Power Field Effect Transistor

MTP2N40E Designer’s™ Data Sheet TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source d.

MTP2N40E Features

* 0 5 10 15 20 25 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 1a. Capacitance Variation 1000 VGS = 0 V TJ = 25°C 100 10 Ciss Coss Crss 1 10 100 10 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 1b. High Voltage Capacitance Variat

MTP2N40E-ONSemiconductor.pdf