Part number:
MTP2N40E
Manufacturer:
File Size:
204.50 KB
Description:
Power field effect transistor.
Datasheet Details
Part number:
MTP2N40E
Manufacturer:
File Size:
204.50 KB
Description:
Power field effect transistor.
MTP2N40E, Power Field Effect Transistor
MTP2N40E Designer’s™ Data Sheet TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.
In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source d
MTP2N40E Features
* 0 5 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 1a. Capacitance Variation 1000 VGS = 0 V TJ = 25°C 100 10 Ciss Coss Crss 1 10 100 10 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 1b. High Voltage Capacitance Variat
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