MTP1N100E Datasheet - ON Semiconductor

MTP1N100E Power Field Effect Transistor

MTP1N100E Designer’s™ Data Sheet TMOS E FET.™ Power Field Effect Transistor High Performance Silicon Gate CMOS This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode.

MTP1N100E Datasheet (210.75 KB)