MTP1N60E Datasheet - Motorola

MTP1N60E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N60E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and com.

MTP1N60E Features

* igure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) 350 300 250 200 150 100 50 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°

MTP1N60E Datasheet (232.60 KB)