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MTP1N60E - TMOS POWER FET

MTP1N60E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N60.

MTP1N60E Features

* igure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) 350 300 250 200 150 100 50 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°

MTP1N60E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTP1N60E
Manufacturer
Motorola
File Size
232.60 KB
Datasheet
MTP1N60E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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