* igure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) 350 300 250 200 150 100 50 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°
MTP1N60E Datasheet (232.60 KB)
MTP1N60E
Motorola
232.60 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N60.
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